elektronische bauelemente MMBTA05 npn silicon epitaxial transistor 26-oct-2009 rev. c page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free description ? the MMBTA05 is amplifier transistor features ? driver transistor marking maximum ratings (at t a = 25 c unless otherwise specified) parameter symbol ratings unit collector - base voltage v cbo 60 v collector - emitter voltage v ceo 60 v emitter - base voltage v ebo 4 v collector current - continuous i c 0.5 a collector power dissapation p c 300 mw junction, storage temperature t j , t stg 150, -55~150 electrical characteristics (at t a = 25 c unless otherwise specified) parameter test conditions symbol min. max. unit collector-base breakdown voltage i c =100a, i e =0 v (br)cbo 60 v collector-emitter breakdown voltage i c =1ma, i b =0 v (br)ceo 60 v emitter-base breakdown voltage i e =100a, i c =0 v (br)ebo 4 v collector cut-off current v cb =60v, i e =0 i cbo 0.1 a collector cut-off current v ce =60v, i b =0 i ceo 0.1 a collector cut-off current v eb =3v, i c =0 i ebo 0.1 a v ce =1v, i c =10ma h fe1 100 400 dc current gain v ce =1v, i c =100ma h fe2 100 collector-emitter saturation voltage i c =100ma, i b =10ma v ce(sat) 0.25 v base-emitter voltage v ce =1v, i c =100ma v be 1.2 v transition frequency v ce =2v, i c =10ma,f=100mhz f t 100 mhz b e c so t -23 millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50 top view a l c b d g h j f k e 1 2 3 1 2 3 1h
elektronische bauelemente MMBTA05 npn silicon epitaxial transistor 26-oct-2009 rev. c page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
